Patent assignee · SE · COMPANY

GLO AB

84Patents
84Active
84Granted
54Portfolio score

Filing activity: Jul 7, 2009 → Dec 12, 2019 · 2 expiring within 5 years

Most-cited patents

PatentTitleAreaCited byStatus
US9281442B2 III-nitride nanowire LED with strain modified surface active region and method of making thereof Electricity 40 Active
US8350251B1 Nanowire sized opto-electronic structure and method for manufacturing the same Electricity 37 Active
US8669574B2 Nanostructured LED Emerging Cross-Sectional Technologies 35 Active
US9054233B2 Multicolor LED and method of fabricating thereof Electricity 26 Active
US9893041B2 Method of forming an array of a multi-device unit cell Electricity 23 Active
US8350249B1 Coalesced nanowire structures with interstitial voids and method for manufacturing the same Emerging Cross-Sectional Technologies 22 Active
US10177123B2 Light emitting diode array on a backplane and method of making thereof Electricity 19 Active
US9941262B2 Laser lift-off on isolated III-nitride light islands for inter-substrate LED transfer Electricity 18 Active
US8669125B2 Nanowire LED structure and method for manufacturing the same Emerging Cross-Sectional Technologies 17 Active
US10193038B2 Through backplane laser irradiation for die transfer Electricity 16 Active
US9287443B2 Nanostructured device Emerging Cross-Sectional Technologies 15 Active
US8664636B2 Nanostructured device Emerging Cross-Sectional Technologies 15 Active
US10304810B2 Method of making a light emitting diode array on a backplane Electricity 11 Active
US9978808B2 Monolithic multicolor direct view display containing different color LEDs and method of making thereof Electricity 10 Active
US10361341B2 Indium gallium nitride red light emitting diode and method of making thereof Electricity 10 Active
US9419183B2 Nanowire sized opto-electronic structure and method for manufacturing the same Electricity 9 Active
US10714464B2 Method of selectively transferring LED die to a backplane using height controlled bonding structures Electricity 9 Active
US9444007B2 Nanopyramid sized opto-electronic structure and method for manufacturing of same Electricity 9 Active
US9035278B2 Coalesced nanowire structures with interstitial voids and method for manufacturing the same Electricity 7 Active
US9882086B2 III-nitride nanowire LED with strain modified surface active region and method of making thereof Electricity 7 Active
US9620559B2 Monolithic image chip for near-to-eye display Electricity 7 Active
US8937295B2 Nanowire sized opto-electronic structure and method for manufacturing the same Electricity 7 Active
US8921141B2 Nanopyramid sized opto-electronic structure and method for manufacturing of same Electricity 6 Active
US9748437B2 Multicolor LED and method of fabricating thereof Electricity 6 Active
US9799796B2 Nanowire sized opto-electronic structure and method for modifying selected portions of same Electricity 5 Active

Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.