Non-volatile memory devices, operating methods thereof and memory systems including the same
US10199116B2 · kind B2 · utility
3Cited by
96References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2017 |
| Grant date | Feb 5, 2019 |
| Priority date | — |
| Expiry date | Jul 31, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/35
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.