Donghyuk Chae
35Patents
11h-index
18Co-inventors
68Inventor score
Filing activity: Jun 24, 2008 → May 2, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8559235B2 | Nonvolatile memory device, operating method thereof and memory system including the same | Electricity | 609 | Active |
| US8654587B2 | Nonvolatile memory devices, channel boosting methods thereof, programming methods thereof, and memory systems including the same | Human Necessities | 588 | Active |
| US8971114B2 | Nonvolatile memory devices and driving methods thereof | Electricity | 183 | Active |
| US8427878B2 | Non-volatile memory devices, operating methods thereof and memory systems including the same | Electricity | 28 | Active |
| US7936601B2 | Non-volatile memory devices and systems including multi-level cells using modified read voltages and methods of operating the same | Physics | 22 | Active |
| US8243514B2 | Non-volatile memory devices and systems including multi-level cells using modified read voltages and methods of operating the same | Physics | 20 | Active |
| US8305817B2 | Nonvolatile memory devices and program methods thereof in which a target verify operation and a pre-pass verify operation are performed simultaneously using a common verify voltage | Physics | 18 | Active |
| US8431969B2 | Interconnection structure of three-dimensional semiconductor device | Electricity | 17 | Active |
| US9390803B2 | Non-volatile memory devices, operating methods thereof and memory systems including the same | Electricity | 17 | Active |
| US8493789B2 | Nonvolatile memory devices, channel boosting methods thereof, programming methods thereof, and memory systems including the same | Human Necessities | 15 | Active |
| US8479083B2 | Flash memory devices having multi-bit memory cells therein with improved read reliability | Physics | 14 | Active |
| US9378831B2 | Nonvolatile memory devices, operating methods thereof and memory systems including the same | Electricity | 11 | Active |
| US8743604B2 | Nonvolatile memory devices having improved read reliability | Physics | 8 | Active |
| US9330770B2 | Non-volatile memory devices, operating methods thereof and memory systems including the same | Electricity | 8 | Active |
| US8964476B2 | Non-volatile memory devices, operating methods thereof and memory systems including the same | Electricity | 7 | Active |
| US8923060B2 | Nonvolatile memory devices and operating methods thereof | Electricity | 6 | Active |
| US9349455B2 | Nonvolatile memory devices and driving methods thereof | Electricity | 6 | Active |
| US9747995B2 | Nonvolatile memory devices, operating methods thereof and memory systems including the same | Electricity | 6 | Active |
| US8917558B2 | Nonvolatile memory devices, operating methods thereof and memory systems including the same | Physics | 6 | Active |
| US9240239B2 | Nonvolatile memory devices and driving methods thereof | Electricity | 3 | Active |
| US10199116B2 | Non-volatile memory devices, operating methods thereof and memory systems including the same | Electricity | 3 | Active |
| US9224489B2 | Flash memory devices having multi-bit memory cells therein with improved read reliability | Physics | 3 | Active |
| US11062784B2 | Non-volatile memory devices, operating methods thereof and memory systems including the same | Electricity | 3 | Active |
| US9330769B2 | Nonvolatile memory devices, operating methods thereof and memory systems including the same | Physics | 2 | Active |
| US9159443B2 | Nonvolatile memory device, operating method thereof and memory system including the same | Electricity | 2 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.