Via and skip via structures

US10199261B1 · kind B1 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• James Jay McMahon · Clifton Park, US
• Ryan Smith · San Clemente, US
• Nicholas V. LiCausi · Watervliet, US
• Errol Todd Ryan · Wappingers Falls, US
• Xunyuan Zhang · Albany, US
• Shao Beng Law · Watervliet, US

Key dates

• Filing date: Jul 19, 2017
• Grant date: Feb 5, 2019
• Expiry date: Jul 19, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L23/5226
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present disclosure generally relates to semiconductor structures and, more particularly, to dielectric repair for via and skip via structures and methods of manufacture. The method includes: etching a via structure in a dielectric layer; repairing sidewalls of the via structure with a repair agent; and extending the via structure with an additional etching into a lower dielectric layer to form a skip via structure exposing a metallization layer.