Tungsten nitride barrier layer deposition
US10199267B2 · kind B2 · utility
0Cited by
15References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2017 |
| Grant date | Feb 5, 2019 |
| Priority date | — |
| Expiry date | Jun 30, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53266
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided herein are methods of tungsten nitride (WN) deposition. Also provided are stacks for tungsten (W) contacts to silicon germanium (SiGe) layers and methods for forming them. The stacks include SiGe/tungsten silicide (WSix)/WN/W layers, with WSix providing an ohmic contact between the SiGe and WN layers. Also provided are methods for reducing fluorine (F) attack of underlying layers in deposition of W-containing films using tungsten hexafluoride (WF6). Apparatuses to perform the methods are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.