Patent · US Active

Conductive structure and method for manufacturing conductive structure

US10199269B2 · kind B2 · utility

6Cited by
4References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 28, 2016
Grant dateFeb 5, 2019
Priority date
Expiry dateFeb 2, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/76855
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A conductive structure includes a substrate including a first dielectric layer formed thereon, at least a first opening formed in the first dielectric layer, a low resistive layer formed in the opening, and a first metal bulk formed on the lower resistive layer in the opening. The first metal bulk directly contacts a surface of the first low resistive layer. The low resistive layer includes a carbonitride of a first metal material, and the first metal bulk includes the first metal material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.