Conductive structure and method for manufacturing conductive structure
US10199269B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 28, 2016 |
| Grant date | Feb 5, 2019 |
| Priority date | — |
| Expiry date | Feb 2, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76855
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A conductive structure includes a substrate including a first dielectric layer formed thereon, at least a first opening formed in the first dielectric layer, a low resistive layer formed in the opening, and a first metal bulk formed on the lower resistive layer in the opening. The first metal bulk directly contacts a surface of the first low resistive layer. The low resistive layer includes a carbonitride of a first metal material, and the first metal bulk includes the first metal material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.