Non-volatile memory device with reduced distance between control gate electrode and selecting gate electrode and manufacturing method thereof
US10199385B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 1, 2017 |
| Grant date | Feb 5, 2019 |
| Priority date | — |
| Expiry date | Aug 1, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
Abstract
A non-volatile memory device includes a semiconductor substrate, a control gate electrode, a first oxide-nitride-oxide (ONO) structure, a selecting gate electrode, a second ONO structure, and a spacer structure. The control gate electrode and the selecting gate electrode are disposed on the semiconductor substrate. The first ONO structure is disposed between the control gate electrode and the semiconductor substrate. The second ONO structure is disposed between the control gate electrode and the selecting gate electrode in a first direction. The spacer structure is disposed between the control gate electrode and the second ONO structure in the first direction. A distance between the control gate electrode and the selecting gate electrode in the first direction is smaller than or equal to a sum of a width of the second ONO structure and a width of the spacer structure in the first direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.