Methods for manufacturing a semiconductor device having a non-ohmic contact formed between a semiconductor material and an electrically conductive contact layer
US10199514B2 · kind B2 · utility
0Cited by
2References
19Claims
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Assignee
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Key dates
| Filing date | Jan 9, 2018 |
| Grant date | Feb 5, 2019 |
| Priority date | — |
| Expiry date | Jan 9, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An embodiment of a method of manufacturing a semiconductor device includes providing a semiconductor material that comprises SiC and forming an electrically conductive contact layer on the semiconductor material. A non-ohmic contact is formed between the semiconductor material and the electrically conductive contact layer. The electrically conductive contact layer comprises a metal nitride with a nitrogen content between 10 to 50 atomic %. Additional embodiments of manufacturing a semiconductor device are described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.