Stefan Krivec
18Patents
2h-index
41Co-inventors
50Inventor score
Filing activity: Aug 27, 2012 → Aug 31, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9660037B1 | Semiconductor wafer and method | Electricity | 35 | Active |
| US9620466B1 | Method of manufacturing an electronic device having a contact pad with partially sealed pores | Electricity | 3 | Active |
| US9595469B2 | Semiconductor device and method for producing the same | Electricity | 2 | Active |
| US9929111B2 | Method of manufacturing a layer structure having partially sealed pores | Electricity | 2 | Active |
| US11195713B2 | Methods of forming a silicon-insulator layer and semiconductor device having the same | Electricity | 0 | Active |
| US10199514B2 | Methods for manufacturing a semiconductor device having a non-ohmic contact formed between a semiconductor material and an electrically conductive contact layer | Electricity | 0 | Active |
| US11798807B2 | Process for producing an electrical contact on a silicon carbide substrate | Electricity | 0 | Active |
| US11842938B2 | Semiconductor device and method for forming a semiconductor device | Electricity | 0 | Active |
| US9599586B2 | Ion sensor | Physics | 0 | Active |
| US10393697B2 | Apparatus for analyzing ion kinetics in dielectrics | Physics | 0 | Active |
| US10431698B2 | Semiconductor device with non-ohmic contact between SiC and a contact layer containing metal nitride | Electricity | 0 | Active |
| US9685347B2 | Semiconductor device and method for producing the same | Electricity | 0 | Active |
| US10763339B2 | Method for manufacturing a semiconductor device having a Schottky contact | Electricity | 0 | Active |
| US9997459B2 | Semiconductor device having a barrier layer made of amorphous molybdenum nitride and method for producing such a semiconductor device | Electricity | 0 | Active |
| US10361096B2 | Semiconductor component, method for processing a substrate and method for producing a semiconductor component | Electricity | 0 | Active |
| US12327727B2 | Chip with a silicon carbide substrate | Electricity | 0 | Active |
| US11043383B2 | Electrical contact connection on silicon carbide substrate | Electricity | 0 | Active |
| US11217500B2 | Semiconductor device and method for forming a semiconductor device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.