Semiconductor device having magnetic tunnel junction structure and method of forming the same
US10199566B2 · kind B2 · utility
3Cited by
4References
34Claims
0Family size
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Key dates
| Filing date | Jul 27, 2016 |
| Grant date | Feb 5, 2019 |
| Priority date | — |
| Expiry date | Sep 11, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
Abstract
A semiconductor device includes a magnetic tunnel junction structure on a lower electrode, an intermediate electrode on the magnetic tunnel junction structure, and an upper electrode on the intermediate electrode, wherein the intermediate electrode includes a lower portion and an upper portion having a side surface profile different from that of the lower portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.