Inventor · Seongnam-si, KR

Jongchul Park

74Patents
7h-index
97Co-inventors
71Inventor score

Filing activity: Aug 3, 2009 → Jul 7, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US8712199B2 Configurable pitch reducing optical fiber array Physics 30 Active
US9766407B2 Untappable secure optical fiber link component Physics 28 Active
US9857536B2 Optical component assembly for use with an optical device Physics 23 Active
US10101536B2 Multichannel optical coupler array Physics 14 Active
US9496488B2 Semiconductor devices and methods of fabricating the same Electricity 9 Active
US8614148B2 Methods for forming fine patterns of a semiconductor device Electricity 8 Active
US10002905B2 Data storage devices Electricity 7 Active
US9570670B2 Magnetic device and method of fabricating the same Electricity 7 Active
US8435876B2 Method of manufacturing semiconductor device Electricity 7 Active
US8637927B2 Semiconductor devices and methods of forming the same Electricity 6 Active
US8581314B2 Semiconductor devices having spacers disposed on an inner sidewall of a contact hole formed in a layer of the semiconductor devices, and a contact plug disposed therein Electricity 6 Active
US10838155B2 Multichannel optical coupler Physics 4 Active
US10395979B2 Semiconductor devices Electricity 4 Active
US10199566B2 Semiconductor device having magnetic tunnel junction structure and method of forming the same Electricity 3 Active
US8338254B2 Methods of manufacturing self aligned buried contact electrodes for vertical channel transistors Electricity 3 Active
US11853901B2 Learning method of AI model and electronic apparatus Physics 3 Active
US10347459B2 Ion beam apparatus including slit structure for extracting ion beam, etching method using the same, and method for manufacturing magnetic memory device using the ion beam apparatus Electricity 2 Active
US9627610B2 Method of forming a pattern using ion beams of bilateral symmetry, a method of forming a magnetic memory device using the same, and an ion beam apparatus generating ion beams of bilateral symmetry Electricity 2 Active
US8815687B2 Methods of manufacturing semiconductor devices having spacers disposed on an inner sidewall of a contact hole formed in a layer of the semiconductor devices, and a contact plug disposed therein Electricity 2 Active
US8192714B2 Method for manufacturing carbon nanotubes Emerging Cross-Sectional Technologies 2 Active
US10205090B2 Semiconductor memory device Electricity 2 Active
US9502643B2 Semiconductor device, magnetic memory device, and method of fabricating the same Electricity 2 Active
US9634240B2 Magnetic memory devices Electricity 2 Active
US9608040B2 Memory device and method of fabricating the same Electricity 2 Active
US9685606B2 Patterning methods, methods of fabricating semiconductor devices using the same, and semiconductor devices fabricated thereby Electricity 2 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.