Patent · US Active

Polishing pad and method for manufacturing the same

US10201886B2 · kind B2 · utility

1Cited by
5References
16Claims
0Family size

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Key dates

Filing dateMay 14, 2015
Grant dateFeb 12, 2019
Priority date
Expiry dateJun 23, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/30625
  • WIPO fieldMachine tools
  • WIPO sectorMechanical engineering

Abstract

Provided is a polishing pad capable of sufficiently reducing minute defects to be generated after polishing on a workpiece which are detected in measurement for a particle size of 26 nm or smaller and capable of providing the workpiece with excellent surface flatness. The polishing pad includes a polishing layer having a polishing surface to polish a workpiece, and includes, in the side opposite to the polishing surface of the polishing layer, an intermediate layer having an amount of deformation C larger than that of the polishing layer, a hard layer having an amount of deformation C smaller than that of the polishing layer, and a cushion layer having an amount of deformation C larger than that of the intermediate layer, in which each of the amounts of deformations C is defined as an amount of deformation in the case of compression in a thickness direction, and the intermediate layer, the hard layer, and the cushion layer are laminated in this order from the side of the polishing layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.