Type III hetrojunction—broken gap HJ
US10203526B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Jul 6, 2016 |
| Grant date | Feb 12, 2019 |
| Priority date | — |
| Expiry date | Jun 1, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/60
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor junction may include a first layer and a second layer. The first layer may include a first semiconductor material and the second layer may be deposited on the first layer and may include a second material. The valence band maximum of the second material is higher than a conduction band minimum of the first semiconductor material, thereby allowing a flow of a majority of free carriers across the semiconductor junction between the first and second layers to be diffusive.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.