Raphael Tsu
18Patents
10h-index
21Co-inventors
72Inventor score
Filing activity: Jun 9, 1978 → Mar 20, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6376337B1 | Epitaxial SiOx barrier/insulation layer | Electricity | 444 | Expired |
| US5216262A | Quantum well structures useful for semiconductor devices | Electricity | 193 | Expired |
| US7105895B2 | Epitaxial SiOx barrier/insulation layer | Electricity | 104 | Expired |
| US5895934A | Negative differential resistance device based on tunneling through microclusters, and method therefor | Electricity | 61 | Expired |
| US4569697A | Method of forming photovoltaic quality amorphous alloys by passivating defect states | Emerging Cross-Sectional Technologies | 55 | Expired |
| US5627386A | Silicon nanostructure light-emitting diode | Electricity | 41 | Expired |
| US5051786A | Passivated polycrystalline semiconductors quantum well/superlattice structures fabricated thereof | Electricity | 34 | Expired |
| US4163238A | Infrared semiconductor device with superlattice region | Electricity | 27 | Expired |
| US5324965A | Light emitting diode with electro-chemically etched porous silicon | Electricity | 21 | Expired |
| US4250515A | Heterojunction superlattice with potential well depth greater than half the bandgap | Electricity | 19 | Expired |
| US7023010B2 | Si/C superlattice useful for semiconductor devices | Electricity | 7 | Expired |
| US9601579B2 | Growth of semiconductors on hetero-substrates using graphene as an interfacial layer | Electricity | 1 | Active |
| US6239450A | Negative differential resistance device based on tunneling through microclusters, and method therefor | Electricity | 1 | Expired |
| US8846506B2 | Enhanced electron mobility at the interface between Gd2O3(100)/N-Si(100) | Electricity | 0 | Active |
| US9000432B2 | Enhanced electron mobility at the interface between GD2O3(100)/N-SI(100) | Electricity | 0 | Active |
| US10374037B2 | Incoherent type-III materials for charge carriers control devices | Emerging Cross-Sectional Technologies | 0 | Active |
| US9812527B2 | Growth of semiconductors on hetero-substrates using graphene as an interfacial layer | Electricity | 0 | Active |
| US10203526B2 | Type III hetrojunction—broken gap HJ | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.