Methods for bottom up fin structure formation
US10204781B1 · kind B1 · utility
3Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 14, 2018 |
| Grant date | Feb 12, 2019 |
| Priority date | — |
| Expiry date | Feb 14, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments described herein relate to substrate processing methods. The methods include forming a patterned hardmask material on a substrate, forming first mandrel structures on exposed regions of the substrate, and depositing a gap fill material on the substrate over the hardmask material and the first mandrel structures. The first mandrel structures are removed to expose second region of the substrate form second mandrel structures comprising the hardmask material and the gap fill material and fin structures are deposited on the substrate using the second mandrel structures as a mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.