Patent · US Active

Contact plug for high-voltage devices

US10204791B1 · kind B1 · utility

2Cited by
2References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 22, 2017
Grant dateFeb 12, 2019
Priority date—
Expiry dateSep 22, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D64/256
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A high-voltage field effect transistor (HFET) includes a first active layer, a second active layer, and a layer of electrical charge disposed proximate to the first active layer and the second active layer. A gate dielectric is disposed proximate to the second active layer. A contact region in the HFET includes a contact coupled to supply or withdraw charge from the HFET, and a passivation layer disposed proximate to the contact and the gate dielectric. An interconnect extends through the passivation layer and is coupled to the contact. An interlayer dielectric is disposed proximate to the interconnect, and a plug extends into the interlayer dielectric and is coupled to the first portion of the interconnect.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.