Inventor · Fryeburg, ME, US

Linlin Liu

31Patents
8h-index
20Co-inventors
71Inventor score

Filing activity: Feb 17, 2004 → May 25, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US7084475B2 Lateral conduction Schottky diode with plural mesas Electricity 78 Expired
US8633094B2 GaN high voltage HFET with passivation plus gate dielectric multilayer structure Electricity 25 Active
US7863172B2 Gallium nitride semiconductor device Electricity 22 Active
US7229866B2 Non-activated guard ring for semiconductor devices Electricity 16 Expired
US9306014B1 High-electron-mobility transistors Electricity 15 Active
US9722063B1 Protective insulator for HFET devices Electricity 14 Active
US8507947B2 High quality GaN high-voltage HFETS on silicon Electricity 8 Active
US7253015B2 Low doped layer for nitride-based semiconductor device Electricity 8 Expired
US7439599B2 PIN photodiode structure and fabrication process for reducing dielectric delamination Electricity 7 Expired
US8319256B2 Layout design for a high power, GaN-based FET Electricity 7 Active
US7436039B2 Gallium nitride semiconductor device Electricity 4 Expired
US10204791B1 Contact plug for high-voltage devices Electricity 2 Active
US7518240B2 Deposition pattern for eliminating backside metal peeling during die separation in semiconductor device fabrication Electricity 2 Active
US8703561B2 High quality GaN high-voltage HFETs on silicon Electricity 2 Active
US10665463B2 Asymmetrical plug technique for GaN devices Electricity 2 Active
US10121885B2 Protective insulator for HFET devices Electricity 2 Active
US10629719B2 Protective insulator for HFET devices Electricity 2 Active
US9147734B2 High quality GaN high-voltage HFETs on silicon Electricity 1 Active
US8022495B2 PIN diode structure with zinc diffusion region Electricity 1 Active
US7538403B2 PIN diode structure with zinc diffusion region Electricity 1 Active
US8530903B2 Layout design for a high power, GaN-based FET having interdigitated electrodes Electricity 1 Active
US7198988B1 Method for eliminating backside metal peeling during die separation Electricity 1 Expired
US11075294B2 Protective insulator for HFET devices Electricity 1 Active
US11373873B2 Asymmetrical plug technique for GaN devices Electricity 1 Active
US9525055B2 High-electron-mobility transistors Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.