Two step method of rapid curing a semiconductor polymer layer
US10204803B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 6, 2015 |
| Grant date | Feb 12, 2019 |
| Priority date | — |
| Expiry date | Apr 26, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/131
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and method of making the semiconductor device is described. A semiconductor die can be provided. A polymer layer can be formed over the semiconductor die. A via can be formed in the polymer layer. The polymer layer can be cross-linked in a first process, after forming the via, by exposing the polymer layer to ultraviolet (UV) radiation to form a sidewall of the via with via sidewall slope greater than or equal to 45 degrees and to further form a cross-linked via sidewall surface. The polymer layer can be thermally cured in a second process after the first process, wherein a maximum ramp-up rate from room temperature to a peak temperature of the second process is greater than 10 degrees Celsius per minute.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.