Method of manufacturing semiconductor device, and semiconductor device
US10204862B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 4, 2016 |
| Grant date | Feb 12, 2019 |
| Priority date | — |
| Expiry date | Jul 22, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/11
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate provided with a through-hole, a device layer including a lower layer wiring, an insulating layer that covers the device layer, a first through-electrode that passes through the insulating layer, a first insulating film provided with an opening having a diameter that is substantially the same as or greater than an opening diameter of the through-hole of the semiconductor substrate, a second insulating film positioned on an upper side of the first insulating film and on an inner side surface of the through-hole of the semiconductor substrate, and a second through-electrode electrically connected to the lower layer wiring in the device layer from an upper side of the second insulating film through the inside of the through-hole of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.