Semiconductor stacking structure, and method and apparatus for separating nitride semiconductor layer using same
US10205052B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 13, 2015 |
| Grant date | Feb 12, 2019 |
| Priority date | — |
| Expiry date | Jul 13, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor stacking structure according to the present invention comprises: a monocrystalline substrate which is disparate from a nitride semiconductor; an inorganic thin film which is formed on a substrate to define a cavity between the inorganic thin film and the substrate, wherein at least a portion of the inorganic thin film is crystallized with a crystal structure that is the same as the substrate; and a nitride semiconductor layer which is grown from a crystallized inorganic thin film above the cavity. The method and apparatus for separating a nitride semiconductor layer according the present invention mechanically separate between the substrate and the nitride semiconductor layer. The mechanical separation can be performed by a method of separation of applying a vertical force to the substrate and the nitride semiconductor layer, a method of separation of applying a horizontal force, a method of separation of applying a force of a relative circular motion, and a combination thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.