Semiconductor structure and semiconductor device using the same
US10205098B2 · kind B2 · utility
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13Claims
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Key dates
| Filing date | Mar 9, 2018 |
| Grant date | Feb 12, 2019 |
| Priority date | — |
| Expiry date | Mar 9, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K30/821
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure includes a semiconductor layer, a carbon nanotube and a conductive film. The semiconductor layer includes a first surface and a second surface. A thickness of the semiconductor layer ranges from 1 nanometer to 100 nanometers. The carbon nanotube is located on the first surface of the semiconductor. The conductive film is located on the second surface of the semiconductor. The conductive film is formed on the second surface by a depositing method. The carbon nanotube, the semiconductor layer and the conductive film are stacked with each other to form a three-layered stereoscopic structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.