Patent · US Active

Method of reverse tone patterning

US10211051B2 · kind B2 · utility

0Cited by

21References

20Claims

0Family size

Assignee

Canon Kabushiki Kaisha · JP

Inventors

Niyaz Khusnatdinov · Round Rock, US
Dwayne L. LaBrake · Austin, US

Key dates

Filing date	Oct 28, 2016
Grant date	Feb 19, 2019
Priority date	—
Expiry date	Nov 9, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/31138
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Methods of reversing the tone of a pattern having non-uniformly sized features. The methods include depositing a highly conformal hard mask layer over the patterned layer with a non-planar protective coating and etch schemes for minimizing critical dimension variations.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.