Process for forming a layer of equiaxed titanium nitride and a MOSFET device having a metal gate electrode including a layer of equiaxed titanium nitride
US10211059B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | May 22, 2017 |
| Grant date | Feb 19, 2019 |
| Priority date | — |
| Expiry date | May 22, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/667
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Local variability of the grain size of work function metal, as well as its crystal orientation, induces a variable work function and local variability of transistor threshold voltage. If the metal nitride for the work function metal of the transistor gate is deposited using a radio frequency physical vapor deposition, equiaxed grains are produced. The substantially equiaxed structure for the metal nitride work function metal layer (such as with TiN) reduces local variability in threshold voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.