Pierre Caubet
16Patents
3h-index
12Co-inventors
53Inventor score
Filing activity: Sep 6, 2005 → May 22, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7601636B2 | Implementation of a metal barrier in an integrated electronic circuit | Electricity | 52 | Active |
| US7851915B2 | Electronic component comprising a titanium carbonitride (TiCN) barrier layer and process of making the same | Electricity | 4 | Active |
| US9691871B1 | Process for forming a layer of equiaxed titanium nitride and a MOSFET device having a metal gate electrode including a layer of equiaxed titanium nitride | Electricity | 3 | Active |
| US7667173B2 | Integrated electrooptic system | Physics | 1 | Active |
| US8013284B2 | Integrated electrooptic system | Physics | 1 | Active |
| US9257518B2 | Method for producing a metal-gate MOS transistor, in particular a PMOS transistor, and corresponding integrated circuit | Electricity | 1 | Active |
| US9029254B2 | Method for depositing a low-diffusion TiAlN layer and insulated gate comprising such a layer | Electricity | 0 | Active |
| US10211059B2 | Process for forming a layer of equiaxed titanium nitride and a MOSFET device having a metal gate electrode including a layer of equiaxed titanium nitride | Electricity | 0 | Active |
| US9953837B2 | Transistor having a gate comprising a titanium nitride layer and method for depositing this layer | Electricity | 0 | Active |
| US8018062B2 | Production of a self-aligned CuSiN barrier | Electricity | 0 | Active |
| US8053871B2 | Implementation of a metal barrier in an integrated electronic circuit | Electricity | 0 | Active |
| US9530489B2 | Optoelectronic device, in particular memory device | Physics | 0 | Active |
| US9000596B2 | Transistors having a gate comprising a titanium nitride layer | Electricity | 0 | Active |
| US7531447B2 | Process for forming integrated circuit comprising copper lines | Electricity | 0 | Expired |
| US7687399B2 | Production of a self-aligned CuSiN barrier | Electricity | 0 | Active |
| US9536599B1 | Optoelectronic device, in particular memory device | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.