Semiconductor device and method for manufacturing the same
US10211070B2 · kind B2 · utility
46Cited by
11References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 16, 2017 |
| Grant date | Feb 19, 2019 |
| Priority date | — |
| Expiry date | Nov 16, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device including a substrate, an insulating, layer on the substrate and including a trench, at least one via structure penetrating the substrate and protruding above a bottom surface of the trench, and a conductive structure surrounding the at least one via structure in the trench may be provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.