Three-dimensional semiconductor device
US10211154B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 14, 2016 |
| Grant date | Feb 19, 2019 |
| Priority date | — |
| Expiry date | Dec 19, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A three-dimensional (3D) semiconductor device includes a stack structure including first and second stacks stacked on a substrate. Each of the first and second stacks includes a first electrode and a second electrode on the first electrode. A sidewall of the second electrode of the first stack is horizontally spaced apart from a sidewall of the second electrode of the second stack by a first distance. A sidewall of the first electrode is horizontally spaced apart from the sidewall of the second electrode by a second distance in each of the first and second stacks. The second distance is smaller than a half of the first distance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.