Patent · US Active

Isolation device

US10211281B2 · kind B2 · utility

2Cited by

9References

20Claims

0Family size

Assignee

Avago Technologies International Sales Pte. Limited · SG

Inventors

Qian Tao · Singapore, SG
Fun Kok Chow · Singapore, SG

Key dates

Filing date	Apr 8, 2015
Grant date	Feb 19, 2019
Priority date	—
Expiry date	Mar 23, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/126
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In one embodiment, an isolation device has a substrate, a metal plate, a conductive layer, first and second isolation layers are disclosed. The conductive layer may be formed within the substrate. The conductive layer may be arranged coupled to the metal plate, so as to receive a capacitively coupled signal from the metal plate. The first and second isolation layers may be sandwiched between the metal plate and the conductive layer. In another embodiment, an isolation device comprising a semiconductor substrate, a topmost metal layer and a plurality of additional metal layers is disclosed. The isolation device further comprises an isolation capacitor formed using the topmost metal layer and a conductive layer coupled to at least one of the plurality of additional metal layers.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.