Inventor · Singapore, SG

Qian Tao

92Patents
11h-index
128Co-inventors
77Inventor score

Filing activity: Mar 13, 2008 → Nov 10, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US9305929B1 Memory cells Electricity 52 Active
US10403631B1 Three-dimensional ferroelectric memory devices Electricity 47 Active
US10283452B2 Three-dimensional memory devices having a plurality of NAND strings Electricity 46 Active
US10147732B1 Source structure of three-dimensional memory device and method for forming the same Electricity 43 Active
USD595347S1 Printer General 24 Expired
USD680163S1 Multi-function imaging and printing device General 21 Active
US10083981B2 Memory arrays, and methods of forming memory arrays Electricity 18 Active
US9231206B2 Methods of forming a ferroelectric memory cell Electricity 17 Active
US9397143B2 Liner for phase change memory (PCM) array and associated techniques and configurations Electricity 14 Active
US9087853B2 Isolation device Electricity 13 Active
US11133325B2 Memory cell structure of a three-dimensional memory device Electricity 11 Active
USD745871S1 Imaging device General 11 Active
US8692200B2 Optical proximity sensor with improved dynamic range and sensitivity Physics 10 Active
US9716225B2 Memory cells including dielectric materials, memory devices including the memory cells, and methods of forming same Electricity 8 Active
US10580788B2 Methods for forming three-dimensional memory devices Electricity 8 Active
US9673203B2 Memory cells Electricity 7 Active
US9147689B1 Methods of forming ferroelectric capacitors Electricity 7 Active
USD681108S1 Printer General 6 Active
US10515975B1 Method for forming dual-deck channel hole structure of three-dimensional memory device Electricity 6 Active
US11031333B2 Three-dimensional memory devices having a plurality of NAND strings Electricity 5 Active
US10193064B2 Memory cells including dielectric materials, memory devices including the memory cells, and methods of forming same Electricity 5 Active
USD766245S1 Imaging device General 5 Active
US10242989B2 Polar, chiral, and non-centro-symmetric ferroelectric materials, memory cells including such materials, and related devices and methods Electricity 4 Active
US10868031B2 Multiple-stack three-dimensional memory device and fabrication method thereof Electricity 4 Active
US9793203B2 Isolation device Electricity 4 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.