Patent · US Active

Photovoltaic cell with high efficiency CIGS absorber layer with low minority carrier lifetime and method of making thereof

US10211351B2 · kind B2 · utility

0Cited by

82References

25Claims

0Family size

Assignee

BEIJING APOLLO DING RONG SOLAR TECHNOLOGY CO., LTD. · CN

Inventors

John Corson · Stanford, US
Alex Austin · Santa Clara, US
Robert Tas · Aromas, US
Neil Mackie · Fremont, US
Mats Larsson · Kalmar, SE
Korhan Demirkan · Santa Clara, US
Weijie Zhang · New Taipei, TW
Jochen Titus · Sunnyvale, US
Swati Sevanna · Santa Clara, US
Robert B. Zubeck · Los Altos, US
Randy Dorn · Henderson, US
Asit Rairkar · San Jose, US
Ron Rulkens · Milpitas, US
Ajay Saproo · Mountain View, US
Dan Vitkavage · Tualatin, US

Key dates

Filing date	Jul 12, 2018
Grant date	Feb 19, 2019
Priority date	—
Expiry date	Jul 12, 2038

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02P70/50
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A solar cell containing a plurality of CIGS absorber sublayers has a conversion efficiency of at least 13.4 percent and a minority carrier lifetime below 2 nanoseconds. The sublayers may have a different composition from each other.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.