Nano avalanche photodiode architecture for photon detection

US10211359B2 · kind B2 · utility

Assignee

• NORTHROP GRUMMAN SYSTEMS CORPORATION · US

Inventors

• Narsingh B. Singh · Ellicott City, US
• John V. Veliadis · Hanover, US
• Bettina Nechay · Laurel, US
• Andre Berghmans · Elkton, US
• David J. Knuteson · Columbia, US
• David Kahler · Arbutus, US
• Brian Wagner · Baltimore, US
• Marc E. Sherwin · Catonsville, US

Key dates

• Filing date: Nov 18, 2016
• Grant date: Feb 19, 2019
• Expiry date: Nov 18, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/413

Abstract

An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.