Brian Wagner
15Patents
3h-index
38Co-inventors
56Inventor score
Filing activity: Jun 26, 2006 → Dec 27, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9257647B2 | Phase change material switch and method of making the same | Electricity | 69 | Active |
| US7737534B2 | Semiconductor devices that include germanium nanofilm layer disposed within openings of silicon dioxide layer | Emerging Cross-Sectional Technologies | 17 | Active |
| US9653398B1 | Non-oxide based dielectrics for superconductor devices | Electricity | 8 | Active |
| US7371282B2 | Solid solution wide bandgap semiconductor materials | Chemistry; Metallurgy | 2 | Active |
| US10276504B2 | Preclean and deposition methodology for superconductor interconnects | Electricity | 2 | Active |
| US10629767B2 | Nano avalanche photodiode architecture for photon detection | Electricity | 0 | Active |
| US7683400B1 | Semiconductor heterojunction devices based on SiC | Electricity | 0 | Active |
| US9570646B2 | Nano avalanche photodiode architecture for photon detection | Electricity | 0 | Active |
| US10211359B2 | Nano avalanche photodiode architecture for photon detection | Electricity | 0 | Active |
| US7525099B2 | Nuclear radiation detection system | Physics | 0 | Active |
| US8278666B1 | Method and apparatus for growing high purity 2H-silicon carbide | Electricity | 0 | Active |
| US10985059B2 | Preclean and dielectric deposition methodology for superconductor interconnect fabrication | Electricity | 0 | Active |
| US7830644B2 | High dielectric capacitor materials and method of their production | Chemistry; Metallurgy | 0 | Active |
| US7855108B2 | Semiconductor heterojunction devices based on SiC | Electricity | 0 | Active |
| US7888248B2 | Method of producing large area SiC substrates | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.