Hall element for 3-D sensing and method for producing the same
US10211392B2 · kind B2 · utility
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Key dates
| Filing date | Jan 10, 2017 |
| Grant date | Feb 19, 2019 |
| Priority date | — |
| Expiry date | Mar 5, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N52/80
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of forming a 3D Hall effect sensor and the resulting device are provided. Embodiments include forming a p-type well in a substrate; forming a first n-type well in a first region surrounded by the p-type well in top view; forming a second n-type well in a second region surrounding the p-type well; implanting n-type dopant in the first and second n-type wells; and implanting p-type dopant in the p-type well and the first n-type well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.