Ruchil Kumar Jain
19Patents
1h-index
31Co-inventors
50Inventor score
Filing activity: Aug 4, 2014 → May 28, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10050082B1 | Hall element for 3-D sensing using integrated planar and vertical elements and method for producing the same | Electricity | 7 | Active |
| US10680099B2 | Isolated laterally diffused metal oxide semiconductor (LDMOS) transistor having low drain to body capacitance | Electricity | 1 | Active |
| US10032765B1 | Integrated circuits with electrostatic discharge protection and methods for producing the same | Electricity | 1 | Active |
| US10777734B2 | Magnetic memory devices with magnetic field sensing and shielding | Electricity | 1 | Active |
| US11552192B2 | High-voltage devices integrated on semiconductor-on-insulator substrate | Electricity | 1 | Active |
| US10333056B2 | Hall element for 3-D sensing and method for producing the same | Electricity | 1 | Active |
| US10211392B2 | Hall element for 3-D sensing and method for producing the same | Electricity | 0 | Active |
| US9343590B2 | Planar semiconductor ESD device and method of making same | Electricity | 0 | Active |
| US12328926B1 | Structures for a field-effect transistor that include a spacer structure | Electricity | 0 | Active |
| US11545570B2 | High-voltage devices integrated on semiconductor-on-insulator substrate | Electricity | 0 | Active |
| US11456364B2 | Structure and method to provide conductive field plate over gate structure | Electricity | 0 | Active |
| US10763427B2 | Hall element for 3-D sensing and method for producing the same | Electricity | 0 | Active |
| US11211550B2 | Magnetic memory devices with magnetic field sensing and shielding | Electricity | 0 | Active |
| US10868081B2 | Memory devices, cross-point memory arrays and methods of fabricating a memory device | Electricity | 0 | Active |
| US10629803B2 | Hall element for 3-D sensing and method for producing the same | Electricity | 0 | Active |
| US11888062B2 | Extended-drain metal-oxide-semiconductor devices with a silicon-germanium layer beneath a portion of the gate | Electricity | 0 | Active |
| US11245067B2 | Hall sensors with a three-dimensional structure | Electricity | 0 | Active |
| US11984503B2 | High-voltage devices integrated on semiconductor-on-insulator substrate | Electricity | 0 | Active |
| US10825984B1 | Sensors including dummy elements arranged about a sensing element | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.