Patent · US Active

Semiconductor device with a bump contact on a TSV comprising a cavity and method of producing such a semiconductor device

US10217715B2 · kind B2 · utility

0Cited by

2References

10Claims

0Family size

Assignee

AMS AG · AT

Inventors

Martin Schrems · Langenbruck, DE
Bernhard Stering · Stainz, AT
Harald Etschmaier · Graz, AT

Key dates

Filing date	Feb 9, 2015
Grant date	Feb 26, 2019
Priority date	—
Expiry date	Jun 30, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2224/131
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The semiconductor device comprises a semiconductor substrate (1) with a main surface (10) and a further main surface (11) opposite the main surface, a TSV (3) penetrating the substrate from the main surface to the further main surface, a metallization (13) of the TSV, an under-bump metallization (5) and a bump contact (6) at least partially covering the TSV at the further main surface. The TSV (3) comprises a cavity (15), which may be filled with a gas or liquid. An opening (15′) of the cavity is provided to expose the cavity to the environment.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.