Flash memory cells, components, and methods
US10217755B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 1, 2017 |
| Grant date | Feb 26, 2019 |
| Priority date | — |
| Expiry date | Apr 1, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
Abstract
Flash memory technology is disclosed. In one example, a flash memory component can include a plurality of insulative layers vertically spaced apart from one another. The memory component can also include a vertically oriented conductive channel extending through the plurality of insulative layers. In addition, the memory component can include a charge storage structure disposed between adjacent insulative layers. The charge storage structure can have a vertical cross section with a first side oriented toward the conductive channel and a second side opposite the first side. A length of the first side can be greater than a length of the second side. In another example, the vertical cross-section of the charge storage structure comprises a non-rectangular shape, such as a trapezoid shape. Associated systems and methods are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.