Semiconductor integrated circuit
US10217765B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 25, 2017 |
| Grant date | Feb 26, 2019 |
| Priority date | — |
| Expiry date | Jan 25, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1426
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor integrated circuit includes a semiconductor layer of a first conductivity type which is stacked on a support substrate with an insulating layer interposed between the semiconductor layer and the support substrate, a first well region of a second conductivity type buried in an upper part of the semiconductor layer so as to be separated from the insulating layer, a second well region of the first conductivity type buried in an upper part of the first well region, and an isolation region of the first conductivity type buried in the upper part of the semiconductor layer such that the isolation region surrounds the first well region and is separated from the first well region and the insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.