Capacitor formed on heavily doped substrate
US10217810B2 · kind B2 · utility
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18Claims
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Assignee
Inventors
Key dates
| Filing date | Nov 9, 2016 |
| Grant date | Feb 26, 2019 |
| Priority date | — |
| Expiry date | Nov 9, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1205
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The teachings of the present disclosure may be applied to the manufacture and design of capacitors. In some embodiments of these teachings, a capacitor may be formed on a heavily doped substrate. For example, a method for manufacturing a capacitor may include: depositing an oxide layer on a first side of a heavily doped substrate; depositing a first metal layer on the oxide layer; and depositing a second metal layer on a second side of the heavily doped substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.