Semiconductor device including metal-2 dimensional material-semiconductor contact
US10217819B2 · kind B2 · utility
3Cited by
19References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 29, 2016 |
| Grant date | Feb 26, 2019 |
| Priority date | — |
| Expiry date | Apr 12, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/882
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor layer, a metal layer electrically contacting the semiconductor layer, and a two-dimensional material layer between the semiconductor layer and the metal layer and having a two-dimensional crystal structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.