Semiconductor device having a transparent window for passing radiation
US10217874B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 20, 2017 |
| Grant date | Feb 26, 2019 |
| Priority date | — |
| Expiry date | Mar 20, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/334
Abstract
Method of encapsulating a semiconductor structure comprising providing a semiconductor structure comprising an opto-electric element located in a cavity formed between a substrate and a cap layer, the cap layer being made of a material transparent to light, and having a flat upper surface; forming at least one protrusion on the cap layer; bringing the at least one protrusion of the cap layer in contact with a tool having a flat surface region, and applying a opaque material to the semiconductor structure where it is not in contact with the tool; and removing the tool thereby providing an encapsulated optical semiconductor device having a transparent window integrally formed with the cap layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.