Jian Chen
12Patents
2h-index
7Co-inventors
39Inventor score
Filing activity: Mar 5, 2015 → May 6, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9431536B1 | Semiconductor device structure with raised source/drain having cap element | Electricity | 7 | Active |
| US10308502B2 | Semiconductor pressure sensor for harsh media application | Electricity | 4 | Active |
| US10006822B2 | Semiconductor sensor assembly for harsh media application | Electricity | 2 | Active |
| US10165639B2 | Integrated LED device | Electricity | 1 | Active |
| US10818752B2 | Semiconductor device with cap element | Electricity | 0 | Active |
| US10217874B2 | Semiconductor device having a transparent window for passing radiation | Electricity | 0 | Active |
| US11169039B2 | Pressure sensor device and method of sensing pressure | Emerging Cross-Sectional Technologies | 0 | Active |
| US9620656B2 | Semiconductor device having a transparent window for passing radiation | Electricity | 0 | Active |
| US11600559B2 | Sensor device and method of manufacture | Electricity | 0 | Active |
| US10164013B2 | Formation method of semiconductor device structure with cap element | Electricity | 0 | Active |
| US11688769B2 | Semiconductor device with cap element | Electricity | 0 | Active |
| US12349383B2 | Isolation structures in semiconductor devices | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.