Clamped avalanche photodiode
US10217889B2 · kind B2 · utility
36Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 27, 2016 |
| Grant date | Feb 26, 2019 |
| Priority date | — |
| Expiry date | Jan 27, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/60
Abstract
An avalanche photodiode device operated in Geiger-mode, the device comprising a P-N junction formed on a substrate with a first semiconductor region and a second semiconductor region with an anode and cathode. The device further comprising a third semiconductor region, the third semiconductor region in physical contact with the second region, not in physical contact with the first region, and being the same semiconductor-type as the first semiconductor region. Additionally comprising a diode on the second semiconductor region and having a turn-on voltage than the P-N junction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.