Magnetic memory cell with asymmetrical geometry programmable by application of current in the absence of a magnetic field
US10224085B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jan 13, 2016 |
| Grant date | Mar 5, 2019 |
| Priority date | — |
| Expiry date | Jan 13, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory slot including a pad formed of a stack of regions made of thin layers, including a first region made of a nonmagnetic conducting material; a second region made of a magnetic material exhibiting a magnetization in a direction perpendicular to the principal plane of the pad; a third region made of a nonmagnetic conducting material of different characteristics to those of the first region; the pad resting on a conducting track adapted to cause the flow of a programming current of chosen sense, in which the pad has an asymmetric shape with respect to any plane perpendicular to the plane of the layers and parallel to the central axis of the track, and with respect to its barycenter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.