Inventor · Meylan, FR

Jean-Pierre Nozieres

25Patents
9h-index
35Co-inventors
75Inventor score

Filing activity: Dec 12, 1991 → May 2, 2020

Most-cited inventions

PatentTitleAreaCited byStatus
US5287238A Dual spin valve magnetoresistive sensor Physics 184 Expired
US6650496B2 Fully integrated matrix magnetic recording head with independent control Physics 55 Expired
US8102701B2 Magnetic memory with a thermally assisted writing procedure Physics 46 Active
US7411817B2 Magnetic memory with a magnetic tunnel junction written in a thermally assisted manner, and method for writing the same Physics 36 Active
US7518897B2 System and method for providing content-addressable magnetoresistive random access memory cells Physics 21 Active
US7332781B2 Magnetic memory with spin-polarized current writing, using amorphous ferromagnetic alloys, writing method for same Electricity 18 Expired
US8273582B2 Method for use in making electronic devices having thin-film magnetic components Electricity 15 Active
US7129555B2 Magnetic memory with write inhibit selection and the writing method for same Electricity 12 Expired
US8031519B2 Shared line magnetic random access memory cells Physics 12 Active
US6771567B2 Dual shield vertical magneto-optical read head Physics 9 Expired
US8228716B2 Magnetic element with thermally assisted writing Physics 7 Active
US7957181B2 Magnetic tunnel junction magnetic memory Emerging Cross-Sectional Technologies 6 Active
US8102703B2 Magnetic element with a fast spin transfer torque writing procedure Physics 5 Active
US7894228B2 System and method for providing content-addressable magnetoresistive random access memory cells Physics 5 Active
US7791917B2 System and method for providing content-addressable magnetoresistive random access memory cells Physics 4 Active
US8409880B2 Method for use in making electronic devices having thin-film magnetic components Electricity 3 Active
US5356489A Process for the preparation of permanent magnets based on neodymium-iron-boron Electricity 2 Expired
US7729231B2 Recording device with a porous heat barrier Electricity 2 Active
US8652856B2 Method for use in making electronic devices having thin-film magnetic components Electricity 2 Active
US9059400B2 Magnetic random access memory cells with isolating liners Electricity 2 Active
US8824202B2 Self-referenced magnetic random access memory cells Physics 2 Active
US10224085B2 Magnetic memory cell with asymmetrical geometry programmable by application of current in the absence of a magnetic field Electricity 1 Active
US8902643B2 Apparatus, system, and method for writing multiple magnetic random access memory cells with a single field line Physics 1 Active
US11380839B2 Magnetic memory cell having deterministic switching and high data retention Electricity 0 Active
US9679626B2 Self-referenced magnetic random access memory Physics 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.