Sensing voltage based on a supply voltage applied to magneto-resistive random access memory (MRAM) bit cells in an MRAM for tracking write operations to the MRAM bit cells
US10224087B1 · kind B1 · utility
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Key dates
| Filing date | Dec 21, 2017 |
| Grant date | Mar 5, 2019 |
| Priority date | — |
| Expiry date | Dec 21, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Sensing voltage based on a supplied to magneto-resistive random access memory (MRAM) bit cells in an MRAM for tracking write operations. Sensing voltage based on supply voltage applied to an MRAM bit cell in a write operation can be used to detect completion of magnetic tunnel junction (MTJ) switching in an MRAM bit cell to terminate the write operation to reduce power and write times. In exemplary aspects provided herein, reference and write operation voltages sensed from the MRAM bit cell in response to the write operation are compared to each other to detect completion of MTJ switching of voltage based on the supply voltage applied to the MRAM bit cell regardless of whether the write operation is logic ‘0’ or logic ‘1’ write operation. This provides a higher sensing margin, because the change in MTJ resistance after MTJ switching completion is larger at the supply voltage rail.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.