Sara Choi
7Patents
3h-index
10Co-inventors
46Inventor score
Filing activity: Sep 27, 2014 → Sep 9, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10224087B1 | Sensing voltage based on a supply voltage applied to magneto-resistive random access memory (MRAM) bit cells in an MRAM for tracking write operations to the MRAM bit cells | Electricity | 7 | Active |
| US9502088B2 | Constant sensing current for reading resistive memory | Physics | 4 | Active |
| US9800271B2 | Error correction and decoding | Electricity | 3 | Active |
| US10290340B1 | Offset-canceling (OC) write operation sensing circuits for sensing switching in a magneto-resistive random access memory (MRAM) bit cell in an MRAM for a write operation | Physics | 3 | Active |
| US10263645B2 | Error correction and decoding | Electricity | 2 | Active |
| US12176036B2 | Memory device for controlling word line voltage and operating method thereof | Physics | 0 | Active |
| US12124702B2 | Semiconductor memory device capable of controlling a floating state of adjacent word lines and an operating method thereof | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.