Method and system for aberration correction in an electron beam system
US10224177B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 6, 2016 |
| Grant date | Mar 5, 2019 |
| Priority date | — |
| Expiry date | May 6, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/1536
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A scanning electron microscopy system is disclosed. The system includes an electron beam source configured to generate a primary electron beam. The system includes a sample stage configured to secure a sample. The system includes a set of electron-optical elements configured to direct at least a portion of the primary electron beam onto a portion of the sample. The set of electron-optical elements includes an upper deflector assembly and a lower deflector assembly. The upper deflector assembly is configured to compensate for chromatic aberration in the primary electron beam caused by the lower deflector assembly. In addition, the system includes a detector assembly configured to detect electrons emanating from the surface of the sample.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.