Methods, systems and computer program products configured to adjust a critical dimension of reticle patterns used to fabricate semiconductor devices
US10224178B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 19, 2017 |
| Grant date | Mar 5, 2019 |
| Priority date | — |
| Expiry date | Jun 14, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31776
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of adjusting a critical dimension of a reticle patterns in a reticle used to fabricate semiconductor devices can include determining respective values for a critical dimension of a plurality of reticle patterns in an image of the reticle and providing an atmospheric plasma to a first reticle pattern included in the plurality of reticle patterns, the first reticle pattern having a first value for the critical dimension that is different than a target value for the critical dimension. The atmospheric plasma may not be provided to second reticle patterns included in the plurality of reticle patterns, the second reticle patterns having a second value for the critical dimension that is about equal to the target value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.