RF sputtering arrangement
US10224188B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 23, 2009 |
| Grant date | Mar 5, 2019 |
| Priority date | — |
| Expiry date | May 30, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3438
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Apparatus for sputtering comprises a vacuum chamber defined by at least one side wall, a base and a cover, at least one first electrode having a surface arranged in the vacuum chamber, a counter electrode having a surface arranged in the vacuum chamber and a RF generator. The RF generator is configured to apply a RF electric field across the at least one first electrode and the counter electrode so as to ignite a plasma between the first electrode and the counter electrode. The counter electrode comprises at least a portion of the side wall and/or the base of the vacuum chamber and an additional electrically conductive member. The additional electrically conductive member comprises at least two surfaces arranged generally parallel to one another and spaced at a distance from one another.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.