Aluminum compound, method of forming thin film by using the same, and method of fabricating integrated circuit device
US10224200B2 · kind B2 · utility
2Cited by
11References
8Claims
0Family size
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Key dates
| Filing date | Mar 10, 2017 |
| Grant date | Mar 5, 2019 |
| Priority date | — |
| Expiry date | Mar 10, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An aluminum compound is represented by Chemical Formula (I) and is used as a source material for forming an aluminum-containing thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.