DNF CO., LTD
26Patents
26Active
26Granted
50Portfolio score
Filing activity: Jun 4, 2014 → Feb 7, 2023
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9245740B2 | Amino-silyl amine compound, method for preparing the same and silicon-containing thin-film using the same | Electricity | 10 | Active |
| US9809608B2 | Cyclodisilazane derivative, method for preparing the same and silicon-containing thin film using the same | Electricity | 4 | Active |
| US10134583B2 | Methods of forming a low-k dielectric layer and methods of fabricating a semiconductor device using the same | Electricity | 3 | Active |
| US10224200B2 | Aluminum compound, method of forming thin film by using the same, and method of fabricating integrated circuit device | Electricity | 2 | Active |
| US11390635B2 | Composition for depositing silicon-containing thin film and method for producing silicon-containing thin film using the same | Chemistry; Metallurgy | 2 | Active |
| US9586979B2 | Amino-silyl amine compound, method for preparing the same and silicon-containing thin-film using the same | Chemistry; Metallurgy | 2 | Active |
| US10202407B2 | Trisilyl amine derivative, method for preparing the same and silicon-containing thin film using the same | Electricity | 1 | Active |
| US10214610B2 | Polymer and composition containing same | Chemistry; Metallurgy | 1 | Active |
| US10894799B2 | Composition for depositing silicon-containing thin film including disilylamine compound and method for manufacturing silicon-containing thin film using the same | Electricity | 1 | Active |
| US9916974B2 | Amino-silyl amine compound and the manufacturing method of dielectric film containing Si—N bond by using atomic layer deposition | Electricity | 1 | Active |
| US12384805B2 | Iodine-containing metal compound and composition for depositing thin film including the same | Chemistry; Metallurgy | 0 | Active |
| US11459653B2 | Method for manufacturing molybdenum-containing thin film and molybdenum-containing thin film manufactured thereby | Emerging Cross-Sectional Technologies | 0 | Active |
| US10361118B2 | Organometallic precursors, methods of forming a layer using the same and methods of manufacturing semiconductor devices using the same | Electricity | 0 | Active |
| US11827650B2 | Method of manufacturing ruthenium-containing thin film and ruthenium-containing thin film manufactured therefrom | Electricity | 0 | Active |
| US11749522B2 | Composition for depositing silicon-containing thin film containing bis(aminosilyl)alkylamine compound and method for manufacturing silicon-containing thin using the same | Electricity | 0 | Active |
| US11230492B2 | Anti-glare glass and manufacturing method therefor | Chemistry; Metallurgy | 0 | Active |
| US12398459B2 | Silicon metal oxide encapsulation film comprising metal or metal oxide in thin film, and manufacturing method therefor | Chemistry; Metallurgy | 0 | Active |
| US11901191B2 | Atomic layer etching method and semiconductor device manufacturing method using the same | Electricity | 0 | Active |
| US11358974B2 | Silylamine compound, composition for depositing silicon-containing thin film containing the same, and method for manufacturing silicon-containing thin film using the composition | Chemistry; Metallurgy | 0 | Active |
| US10913755B2 | Transition metal compound, preparation method therefor, and composition for depositing transition metal-containing thin film, containing same | Chemistry; Metallurgy | 0 | Active |
| US11393676B2 | Composition for depositing silicon-containing thin film containing bis(aminosilyl)alkylamine compound and method for manufacturing silicon-containing thin film using the same | Electricity | 0 | Active |
| US10882873B2 | Method of forming tin-containing material film and method of synthesizing a tin compound | Chemistry; Metallurgy | 0 | Active |
| US11062940B2 | Organometallic precursors, methods of forming a layer using the same and methods of manufacturing semiconductor devices using the same | Electricity | 0 | Active |
| US12304924B2 | Silylcyclodisilazane compound and method for manufacturing silicon-containing thin film using the same | Chemistry; Metallurgy | 0 | Active |
| US11319333B2 | Disilylamine compound, method for preparing the same, and composition for depositing silicon-containing thin film including the same | Chemistry; Metallurgy | 0 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.